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 VEMI255A-HS3
Vishay Semiconductors
2-channel EMI Filter with ESD-Protection
Features
* * * * * * * * * Ultra compact LLP75 package 2-channel EMI-Filter + ESD-protection e3 Low leakage current Line resistance of 50 Ohms Typical cut-off frequency 100 MHz ESD protection to IEC 61000-4-2 30 kV (Air) ESD protection to IEC 61000-4-2 30 kV (Contact) Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE2002/96/EC
4
5
Top view
6
4 5
3
19499
3 2 1
2
6
1
Marking:
Mechanical Data
Case: LLP75-6A (plastic package). Non magnetic Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Weight: 5 mg Packaging Codes/Options: GS18 = 10 k per 13" reel (8 mm tape), 10 k/box GS08 = 3 k per 7" reel (8 mm tape), 15 k/box
Square = Pin 1 marking "T1" = Type Code for VEMI255A-HS3 SD = Date Code (Example only)
Absolute Maximum Ratings
Ratings at 25 C, ambient temperature unless otherwise specified Parameter ESD Air Discharge per IEC 61000-4-2 ESD Contact Discharge per IEC 61000-4-2 Symbol VESD VESD Value 30 30 Unit kV kV
Thermal Characteristics
Ratings at 25 C, ambient temperature unless otherwise specified Parameter Operating Temperature Storage Temperature Symbol TJ TSTG Value - 40 to + 125 - 55 to + 150 Unit C C
Electrical Characteristics
(TA = 25 C unless otherwise specified) Parameter Reverse Stand-Off Voltage Max. Reverse current Test Conditions at IR = 1 A each Input to Pin 2 at VR = 5 V each Input to Pin 2 Synbol VRWM IR Min. 5 1 Typ. Max. Unit V A
Document Number 84772 Rev. 1.2, 15-Aug-05
SD T1
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VEMI255A-HS3
Vishay Semiconductors
Parameter Max. Output Clamping voltage Test Conditions at IPP = 4 A each Input to Pin 2 Acc. IEC 61000-4-5 measured at output pin at IF = 4 A each Input to Pin 2 Acc. IEC 61000-4-5 each Input to Pin 2 Acc. IEC 61000-4-5 each Input to Pin 2 at IR = 1 mA each Input to Pin 2; output not connected; VIN = 0 V ; f = 1 MHz 10 pulses, both polarities Acc. IEC 6100-4-2 device not damaged Measured in a 50 Ohm system Measure between input and output; Pin 2 = not connecte; IS = 10 mA
70 8s to 100% 100 % 60 50 f = 1MHz
Synbol VC
Min.
Typ.
Max. 8
Unit V
Max. Forward Clamping voltage Max. Peak pulse current Min. Reverse Breakdown Voltage Input Capacitance
VF IPPM VBR CIN -4 6 60
4.5 4
V A V pF
ESD-Immunity Cut-off Frequency Line Resistance
VESD f3dB RS
30 kV 100 50
V MHz
80 %
CIN in pF
IPPM
60 %
40 30 20
20s to 50%
40 %
20 %
10 0 0 10 20 30 40
19570
0%
0
1
2
3
4
5
19568
Time in s
VIN in V
Figure 1. 8/20s Peak Pulse Current wave form acc. IEC 61000-4-5
0 -5
Figure 3. Typical Capacitance CIN vs. Reverse Voltage VIN
8 7
VINPUT = 5V VINPUT = 0V
Transmission (S21) in dB
-10 -15 -20 -25 -30 -35 Measured in a 50 Ohm system -40 1
19569
6
VIN in V
5 4 3 2 1 Filter output not connected 0
10
100
1000
10000
0.01
10571
0.1
1
10
100
1000
10000
Frequency in MHz
IIN in A
Figure 2. Typical small signal transmission (S21) @ Z0 = 50 Ohm
Figure 4. Typical Input Voltage VIN vs. Input Current IIN
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Document Number 84772 Rev. 1.2, 15-Aug-05
VEMI255A-HS3
Vishay Semiconductors
12 Vc @ Input 10
8
VC in V
6
Vc @ Output
4
2
Measured acc. IEC 61000-4-5 (8/20s - wave form). Surge pulse applied at the filter input. 0 1 2 3 4 5 6
0
19572
IPP in A
Figure 5. Typical Clamping Voltage vs. Peak Pulse Current IPP
Document Number 84772 Rev. 1.2, 15-Aug-05
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VEMI255A-HS3
Vishay Semiconductors Application Note:
a) With the VEMI255A-HS3 2 different signal or data lines can be filtered and clamped to ground. Due to the different clamping levels in forward and reverse direction the clamping behavior is Bidirectional and Asymmetric (BiAs).
L1IN
4 5
3 2
L1OUT
L2IN 6
19500
L2OUT 1
19420
The 2 independent EMI-Filter are placed between Pin 1 & Pin 6, and Pin 3 & Pin 4 They all are connected to the common ground Pin no. 2. Pin no. 5 is not connected. Each filter is symmetrical so that all ports (Pin 1, 3, 4 & 6) can be used as Input or Output.
19421
Circuit diagram of one EMI-Filter-Channel
RS
Input C
Output C
Ground
19467
Each filter is symmetrical so that both ports can be used as Input or Output.
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Document Number 84772 Rev. 1.2, 15-Aug-05
VEMI255A-HS3
Vishay Semiconductors Package dimensions in mm (inches)
1 (0.039) 0.25 (0.010) (6x) 0.6 (0.023) 1 2 3
6 0.5 (0.020)
5
4
1 (0.039)
0.7 (0.027)
0.15 (0.006)
0.25 (0.010)
ISO Method E
1.6 (0.062)
1.6 (0.062)
Top View
18058
Document Number 84772 Rev. 1.2, 15-Aug-05
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VESD05A8-HN2
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 84772 Rev. 1.2, 15-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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